STGW30NB60H n-channel 30a - 600v to-247 powermesh ? igbt n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low gate charge n high current capability n very high frequency operation n off losses include tail current description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding perfomances. the suffix "h" identifies a family optimized to achieve very low switching times for high frequency applications (<120khz). applications n high frequency motor controls n welding equipments n smps and pfc in both hard switch and resonant topologies ? internal schematic diagram june 1999 1 2 3 to-247 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25 o c60a i c collector current (continuous) at t c = 100 o c30a i cm ( ) collector current (pulsed) 240 a p tot total dissipation at t c = 25 o c190w derating factor 1.52 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v ces v ce(sat) i c STGW30NB60H 600 v < 2.8 v 30 a 1/8
thermal data r thj-case r thj-amb r thc-h thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-heatsink typ 0.66 30 0.1 o c/w oc/w o c/w electrical characteristics (t j = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 m a v ge = 0 600 v i ces collector cut-off (v ge = 0) v ce = max rating t j = 25 o c v ce = max rating t j = 125 o c 10 100 m a m a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v v ce = 0 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge i c = 250 m a35v v ce(sat) collector-emitter saturation voltage v ge = 15 v i c = 30 a v ge = 15 v i c = 30 a t j = 125 o c 2.2 1.8 2.8 v v dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25 v i c = 30 a 20 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v f = 1 mhz v ge = 0 2300 250 60 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v i c = 30 a v ge = 15 v 150 15 72 nc nc nc i cl latching current v clamp = 480 v r g =10 w t j = 150 o c 120 a switching on symbol parameter test conditions min. typ. max. unit t d(on) t r delay time rise time v cc = 480 v i c = 30 a v ge = 15 v r g = 10 w 15 75 ns ns (di/dt) on e on turn-on current slope turn-on switching losses v cc = 480 v i c = 30 a r g = 10 w v ge = 15 v t j = 125 o c 760 850 a/ m s m j STGW30NB60H 2/8
electrical characteristics (continued) switching off symbol parameter test conditions min. typ. max. unit t c t r (v off ) t d ( off ) t f e off (**) e ts cross-over time off voltage rise time delay time fall time turn-off switching loss total switching loss v cc = 480 v i c = 30 a r ge = 10 w v ge = 15 v 150 40 210 90 1.10 1.8 ns ns ns ns mj mj t c t r (v off ) t d ( off ) t f e off (**) e ts cross-over time off voltage rise time delay time fall time turn-off switching loss total switching loss vcc = 480 v i c = 30 a r ge = 10 w v ge = 15 v t j = 125 o c 250 70 250 160 1.6 2.45 ns ns ns ns mj mj ( ) pulse width limited by max. junction temperature ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % (**)losses include also the tail (jedec standardization) thermal impedance STGW30NB60H 3/8
output characteristics transconductance collector-emitter on voltage vs collector current transfer characteristics collector-emitter on voltage vs temperature gate threshold vs temperature STGW30NB60H 4/8
normalized breakdown voltage vs temperature gate charge vs gate-emitter voltage total switching losses vs temperature capacitance variations total switching losses vs gate resistance total switching losses vs collector current STGW30NB60H 5/8
switching off safe operating area fig. 1: gate charge test circuit fig. 2: test circuit for inductive load switching fig. 3 switching waveforms STGW30NB60H 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data STGW30NB60H 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STGW30NB60H 8/8
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